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杜祖亮教授课题组在Organic Electronics上发表了基于NiO纳米晶作为空穴注入层的量子点发光二极管的研究成果

信息来源: 发布日期: 2017-05-02作者: 浏览次数:

 近期,杜祖亮课题组利用溶剂热法制备出NiO纳米晶,并将之作为空穴注入层构筑高性能红光QLED。这些结果对提高QD-LEDs器件的使用寿命具有重要意义。该研究成果发表在Organic Electronics2017, 44, 189-197SCI二区,  IF=3.471)上。

http://www.sciencedirect.com/science/article/pii/S156611991730085X


Highly bright orange-red QLED with peak luminance up to ~25580 cd m-2, and current efficiency (CE) of 5.38 cd A-1 are achieved successfully based on the high performance NiO HIL, further, the device obtained relative long operational lifetime of 11491 h, which has been improved by more than 6- fold as compared to 1839 h for the device based on PEDOT.

基于NiO纳米晶作为空穴注入层的红光QLED的亮度与电流效率分别可达25580 cd m-2 5.38 cd A-1,最为关键的是,器件的使用寿命可达到11491 h,是以传统的PEDOT作为空穴注入层QLED器件寿命的6倍。